Infineon DF160R12W2H3F_B11 SiC IGBT模块 1200 V，160 A升压IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelDF160R12W2H3F_B11
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Technology: SiC
Unit Weight: 36 g
REACH - SVHC: Details
Configuration: Quad
Mounting Style: Press Fit
Pd - Power Dissipation: 20 mW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 20 A
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