Infineon DF200R12W1H3FB11BOMA1 SiC IGBT 模块 1200 V，30 A，EasyPACK 封装 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelDF200R12W1H3FB11BOMA1
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Technology: Si
Unit Weight: 24 g
Configuration: 3-Phase Inverter
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.3 V
Continuous Collector Current at 25 C: 30 A
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