Infineon F3L11MR12W2M1B65BOMA1 碳化硅晶体管MOSFET阵列模块六路N沟1200V AG-Easy2BM托盘
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ModelF3L11MR12W2M1B65BOMA1
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Channel Type: Dual N Channel
Power Dissipation: 20
Transistor Case Style: Module
Drain Source Voltage Vds: 1.2
Operating Temperature Max: 150 °C
Continuous Drain Current Id: 100
Mosfet Module Configuration: Full Bridge
Drain Source On State Resistance: 11.3
Gate Source Threshold Voltage Max: 5.55
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