Infineon F3L400R07W3S5B59BPSA1 IGBT硅模块 650 V，400 A 三级IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelF3L400R07W3S5B59BPSA1
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Technology: Si
Configuration: 3-Phase Inverter
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 880 mV
Continuous Collector Current at 25 C: 255 A
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