Infineon F4150R17ME4B11BPSA1 IGBT 硅模块 中功率 经济型
制造商Infineon(查看更多该品牌的产品)
ModelF4150R17ME4B11BPSA1
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Technology: Si
Unit Weight: 345 g
Configuration: 4-Pack
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 1.95 V
Continuous Collector Current at 25 C: 230 A
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