Infineon F450R12KS4BPSA1 IGBT 硅模块 1200 V，50 A 四联包 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelF450R12KS4BPSA1
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Technology: Si
Configuration: 4-Pack
Pd - Power Dissipation: 355 W
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 70 A
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