Infineon FD1000R17IE4DB2BOSA1 绝缘栅双极型晶体管
制造商Infineon(查看更多该品牌的产品)
ModelFD1000R17IE4DB2BOSA1
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IGBT Technology: IGBT 4
IGBT Termination: Stud|Tab
Power Dissipation: 6.25
IGBT Configuration: Single Chopper
Transistor Mounting: Screw Mount
Transistor Case Style: Module
Operating Temperature Max: 150 °C
Continuous Collector Current: 1.39
Collector Emitter Voltage Max: 1.7
Collector Emitter Saturation Voltage: 2
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