Infineon FD300R17KE4PHOSA1 IGBT 硅模块 1700 V，300 A 斩波器 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelFD300R17KE4PHOSA1
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Technology: Si
Unit Weight: 340 g
Configuration: Single
Mounting Style: Screw Mount
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 1.95 V
Continuous Collector Current at 25 C: 300 A
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