Infineon FF1000R17IE4D_B2 IGBT模块 IGBT 1700V 1000A
制造商Infineon(查看更多该品牌的产品)
ModelFF1000R17IE4D_B2
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Technology: Si
Unit Weight: 1.2 kg
REACH - SVHC: Details
Configuration: Dual
Pd - Power Dissipation: 6.25 kW
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 1.39 kA
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