Infineon FF100R12RT4 IGBT模块 IGBT模块带IGBT和二极管
制造商Infineon(查看更多该品牌的产品)
ModelFF100R12RT4
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Technology: Si
Unit Weight: 160 g
Configuration: Dual
Pd - Power Dissipation: 555 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 100 A
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