Infineon FF11MR12W2M1HB70BPSA1 2通道N型CoolSiC MOSFET双模块 1200 V

Fall Time: 28 ns

Rise Time: 16.4 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

If - Forward Current: 89 A

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 20 mW

Vgs - Gate-Source Voltage: - 10 V, + 20 V

Typical Turn-On Delay Time: 25.1 ns

Typical Turn-Off Delay Time: 64.3 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 11.3 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.5 V