Infineon FF1200R12IE5PBPSA1 IGBT硅模块 1200 V, 1200 A 双IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelFF1200R12IE5PBPSA1
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Technology: Si
Unit Weight: 825 g
Configuration: Dual
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 1.2 kA
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