Infineon FF200R17KE4HOSA1 IGBT模块 1700 V，200 A 双IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelFF200R17KE4HOSA1
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Technology: Si
Configuration: Dual
Mounting Style: Screw Mount
Pd - Power Dissipation: 1.25 kW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 2.3 V
Continuous Collector Current at 25 C: 310 A
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