Infineon FF225R17ME7B11BPSA1 IGBT硅模块1700 V，225 A双IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelFF225R17ME7B11BPSA1
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Technology: Si
Configuration: Dual
Mounting Style: Screw Mount
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 225 A
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