Infineon FF300R07KE4 IGBT模块 IGBT模块 300A 650V

Technology: Si

Unit Weight: 340 g

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 940 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 365 A