Infineon FF300R08W2P2B11ABOMA1 IGBT 硅模块 EASY PACK SI
制造商Infineon(查看更多该品牌的产品)
ModelFF300R08W2P2B11ABOMA1
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Technology: Si
Configuration: Dual
Gate-Emitter Leakage Current: 10 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 750 V
Collector-Emitter Saturation Voltage: 1 V
Continuous Collector Current at 25 C: 200 A
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