Infineon FF300R08W2P2B11ABOMA1 IGBT 硅模块 EASY PACK SI

Technology: Si

Configuration: Dual

Gate-Emitter Leakage Current: 10 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 750 V

Collector-Emitter Saturation Voltage: 1 V

Continuous Collector Current at 25 C: 200 A