Infineon FF650R17IE4VBOSA1 绝缘栅双极型晶体管
制造商Infineon(查看更多该品牌的产品)
ModelFF650R17IE4VBOSA1
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IGBT Technology: IGBT 4 [Trench
IGBT Termination: Stud
Power Dissipation: 4.15
IGBT Configuration: Dual [Half Bri
Transistor Mounting: Screw Mount
Transistor Case Style: Module
Operating Temperature Max: 150 °C
Continuous Collector Current: 930
Collector Emitter Voltage Max: 1.7
Collector Emitter Saturation Voltage: 2
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