Infineon FF7MR12W1M1HB17BPSA1 MOSFET模块 EASY STANDARD

Fall Time: 34 ns

Rise Time: 110 ns

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Vf - Forward Voltage: 5.28 V

Pd - Power Dissipation: 20 mW

Vgs - Gate-Source Voltage: - 7 V, + 20 V

Typical Turn-On Delay Time: 78 ns

Typical Turn-Off Delay Time: 119 ns

Id - Continuous Drain Current: 105 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 5.8 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.15 V