Infineon FF900R12IP4DBOSA2 工业

IGBT Technology: IGBT 4 [Trench

IGBT Termination: Stud

Power Dissipation: 5.1

IGBT Configuration: Dual [Half Bri

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 900

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.7

Datasheet