Infineon FP35R12W2T7PBPSA1 IGBT 硅模块 EASY STANDARD
制造商Infineon(查看更多该品牌的产品)
ModelFP35R12W2T7PBPSA1
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Technology: Si
Configuration: PIM
Mounting Style: Through Hole
Pd - Power Dissipation: 20 mW
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.6 V
Continuous Collector Current at 25 C: 35 A
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