Infineon FP50R07N2E4BPSA1 IGBT 硅模块 650 V，50 A PIM 三相输入整流器 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelFP50R07N2E4BPSA1
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Technology: Si
Configuration: 3-Phase Inverter
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 70 A
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