Infineon FP75R12N2T7PB11BPSA1 IGBT 硅模块 1200 V，25 A PIM IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelFP75R12N2T7PB11BPSA1
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Technology: Si
Configuration: 3-Phase Inverter
Mounting Style: Through Hole
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.55 V
Continuous Collector Current at 25 C: 75 A
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