Infineon FS03MR12A7MA2BHPSA1 MOSFET模块混合封装驱动G2 SiC

Fall Time: 40 ns

Rise Time: 52 ns

Technology: SiC

Mounting Style: Press Fit

Transistor Polarity: N-Channel

If - Forward Current: 142 A

Vf - Forward Voltage: 4.65 V

Vr - Reverse Voltage: 750 V

Vgs - Gate-Source Voltage: - 10 V, + 23 V

Typical Turn-On Delay Time: 75 ns

Typical Turn-Off Delay Time: 134 ns

Id - Continuous Drain Current: 310 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.4 kV

Vgs th - Gate-Source Threshold Voltage: 4.55 V