Infineon FS45MR12W1M1PB11BPSA1 碳化硅晶体管MOSFET阵列模块六路N沟1200V AG-Easy1BM托盘
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ModelFS45MR12W1M1PB11BPSA1
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Channel Type: Hex N Channel
Power Dissipation: 20
Transistor Case Style: Module
Drain Source Voltage Vds: 1.2
Operating Temperature Max: 150 °C
Continuous Drain Current Id: 25
Mosfet Module Configuration: SixPack
Drain Source On State Resistance: 45
Gate Source Threshold Voltage Max: 5.55
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