Infineon FS50R12W2T4_B11 IGBT模块 IGBT 1200V 50A

Technology: Si

Unit Weight: 39 g

REACH - SVHC: Details

Configuration: 6-Pack

Mounting Style: Screw Mount

Pd - Power Dissipation: 335 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.85 V

Continuous Collector Current at 25 C: 83 A