Infineon FZ1800R45HL4S7BPSA1 IGBT硅模块 4500 V，1800 A 单开关IGBT模块

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 4 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 25 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 4.5 kV

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 1.8 kA