Infineon FZ2000R33HE4BOSA1 IGBT 硅模块 IHV IHM T
制造商Infineon(查看更多该品牌的产品)
ModelFZ2000R33HE4BOSA1
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Technology: Si
Configuration: Single
Pd - Power Dissipation: 4.2 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 3.3 kV
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 2 kA
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