Infineon FZ2400R33HE4BPSA1 IGBT硅模块 3300 V，2400 A 单开关IGBT模块
制造商Infineon(查看更多该品牌的产品)
ModelFZ2400R33HE4BPSA1
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Technology: Si
Configuration: Single
Pd - Power Dissipation: 5.4 MW
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 3.3 kV
Collector-Emitter Saturation Voltage: 2.4 V
Continuous Collector Current at 25 C: 2.4 kA
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