Infineon GS-065-060-3-B-MR 氮化镓场效应管 650V, 60A, 氮化镓增强型, GaNPX 封装, 底部冷却

Fall Time: 7.7 ns

Rise Time: 8.5 ns

Technology: GaN

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: E-Mode

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Typical Turn-On Delay Time: 8.1 ns

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Typical Turn-Off Delay Time: 9.8 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 650 V