Infineon GS61004B-MR 氮化镓场效应管 100V，38A，氮化镓增强型，GaNPX 封装，底部散热

Technology: GaN-on-Si

Unit Weight: 403.068 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: GS61004B-EVBCD, GSWP050W-EVBPA

Transistor Type: E-Mode

Qg - Gate Charge: 3.3 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 38 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 22 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V