Infineon GS66502B-MR 氮化镓场效应管 650V，7.5A，氮化镓增强型，GaNPX 封装，底部冷却

Technology: GaN-on-Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: GS665MB-EVB

Transistor Type: E-Mode

Qg - Gate Charge: 1.6 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 7.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 260 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V