Infineon GS66516B-MR 氮化镓场效应管 650V, 60A, 氮化镓增强型, GaNPX 封装, 底部冷却

Fall Time: 22 ns

Rise Time: 12.4 ns

Technology: GaN-on-Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: GSP65RXXHB-EVB, GSP665x-EVBIMS2

Transistor Type: E-Mode

Qg - Gate Charge: 14.2 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Typical Turn-On Delay Time: 4.6 ns

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Typical Turn-Off Delay Time: 14.9 ns

Id - Continuous Drain Current: 60 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 32 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V