Infineon IFS150B12N3E4P_B11 IGBT 硅模块 1200V，150A，六合一 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelIFS150B12N3E4P_B11
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Technology: Si
Unit Weight: 422.455 g
Configuration: 6-Pack
Pd - Power Dissipation: 750 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.75 V
Continuous Collector Current at 25 C: 220 A
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