Infineon IGB110S101XTMA1 CoolGaN 晶体管 MV GAN 离散器件

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 4 V, + 5.5 V

Id - Continuous Drain Current: 23 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.9 V