Infineon IGT65R035D2ATMA1 CoolGaN 晶体管 高压氮化镓分立器件

Fall Time: 11 ns

Rise Time: 10 ns

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 7.7 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 167 W

Vgs - Gate-Source Voltage: - 10 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 49 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 42 mnOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V