Infineon IGW03N120H2 IGBT晶体管 高速 2 TECH 1200V 3A

Width: 5.3 mm

Height: 20.95 mm

Length: 15.9 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 62.5 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 9.6 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 9.6 A