Infineon IKD03N60RFATMA1 IGBT晶体管 IGBT 带集成二极管 600V 5A

Width: 6.22 mm

Height: 2.41 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 332.520 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 53.6 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 6.5 A