Infineon IKD04N60RC2ATMA1 IGBT晶体管 600 V，4 A 反向导通驱动2二极管TO-252封装IGBT分立器件

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 36.6 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 8 A