Infineon IKWH30N67PR7XKSA1 IGBTs IGBT7 PR7 优化用于升压功率因数校正阶段，如 RAC/CAC 和 HVAC 应用

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 179 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 670 V

Continuous Collector Current Ic Max: 71 A

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 71 A