Infineon IMZA75R008M1HXKSA1 碳化硅MOSFET

Fall Time: 16 ns

Rise Time: 30 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 178 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 517 W

Vgs - Gate-Source Voltage: - 5 V, + 23 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 163 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 10.6 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 5.6 V