Infineon IPB017N06N3 G OptiMOS 3 功率晶体管 N沟道 60V 180A D2PAK-6 OptiMOS 3

Width: 9.25 mm

Height: 4.4 mm

Length: 10 mm

Fall Time: 24 ns

Rise Time: 80 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 275 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 41 ns

Typical Turn-Off Delay Time: 79 ns

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 99 S

Rds On - Drain-Source Resistance: 1.3 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V