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Infineon IPB072N15N3GATMA1 单个MOSFET

ModelIPB072N15N3GATMA1
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No. of Pins: 3

Channel Type: N Channel

Product Range: OptiMOS 3 Series

Power Dissipation: 300 W

Transistor Mounting: Surface Mount

RDS(ON) Test Voltage: 10 V

Transistor Case Style: TO-263 (D2PAK)

Drain Source Voltage Vds: 150 V

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 100 A

Drain Source On State Resistance: 72 mOhm

Gate Source Threshold Voltage Max: 4 V

Datasheet


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