Infineon IPB110N06L G Power MOSFET

Type: Power MOSFET

Vgs(th): 2 V

Gate Charge (Qg): 79nC

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 78A

Input Capacitance (Ciss): 2700pF

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 11mOhm