Infineon IPB70N10SL16ATMA1 Power MOSFET

Type: Power MOSFET

Vgs(th): 2 V

Vgs (Max): 20V

Gate Charge (Qg): 240nC

Power consumption: 250W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 70A

Input Capacitance (Ciss): 4540pF

Operating temperature range: -55 to 175C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 16mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet