Infineon IPD35N10S3L26ATMA1 MOSFETs N沟道 100V 35A DPAK-2 OptiMOS-T

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 3 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 39 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 71 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V