Infineon IPD90P04P405ATMA1 MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 154nC

Power consumption: 125W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 90A

Input Capacitance (Ciss): 10300pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 4.7mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet