Infineon IPG20N06S4L-26 MOSFETs N沟道 60V 20A TDSON-8 OptiMOS-T2

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 10 ns, 10 ns

Rise Time: 1.5 ns, 1.5 ns

Technology: Si

Unit Weight: 96.440 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 20 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 5 ns, 5 ns

Typical Turn-Off Delay Time: 18 ns, 18 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V