Infineon IPI45P03P4L11AKSA1 MOSFET

Vgs(th): 2 V

Vgs (Max): +5|-16V

Gate Charge (Qg): 55nC

Power consumption: 58W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 30V

Continuous drain current: 45A

Input Capacitance (Ciss): 3770pF

Operating temperature range: -55 to 175C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 11.1mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V