Infineon IPN60R1K0CEATMA1 MOSFETs 消费类

Width: 3.5 mm

Height: 1.6 mm

Length: 6.5 mm

Fall Time: 13 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 112 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 6.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 2.34 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V